vishay BYG20 document number 86009 rev. 5, 07 - jan -0 3 vishay semiconductors www.vishay.com 1 15 811 ultraf ast avalanche smd rectifier features ? glass passivated junction ? low reverse current ? soft recovery characteristics ? fast reverse recovery time ? good switching characteristics ? wave and reflow solderable applications surface mounting fast rectifier freewheeling diodes in smps and converters snubber diodes order information absolute maximum ratings t j = 25 c, unless otherwise specified maximum thermal resistance t j = 25 c, unless otherwise specified part number part differentiation BYG20d v r = 200 v @ i fav = 1.5 a BYG20g v r = 400 v @ i fav = 1.5 a BYG20j v r = 600 v @ i fav = 1.5 a parameter test condition sub type symbol value unit reverse voltage = repetitive peak reverse voltage BYG20d v r = v rrm 200 v BYG20g v r = v rrm 400 v BYG20j v r = v rrm 600 v peak forward surge current t p = 10 ms, half sinewave i fsm 30 a average forward current i fav 1.5 a junction and storage temperature range t j = t stg - 55 to + 150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, t j = 25 c e r 20 mj parameter test condition sub type symbol value unit junction lead t l = const. - - r thjl 25 k/w junction ambient mounted on epoxy-glass hard tissue r thja 150 k/w mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu r thja 125 k/w mounted on al-oxid-ceramic (al 2 o 3 ), 50 mm 2 35 m cu r thja 100 k/w
document number 86009 rev.5,0 7 - jan -0 3 www.vishay.com 2 vishay BYG20 vishay semiconductors electrical characteristics t j = 25 c, unless otherwise specified charateristics (t j = 25 c unless otherwise specified) parameter test condition sub type symbol min ty p. max unit forward voltage i f = 1 a v f 1.3 v i f = 1.5 a v f 1.4 v reverse current v r = v rrm i r 1 a v r = v rrm , t j = 100 c i r 10 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 75 ns figure 1. forward current vs. forward voltage figure 2. max. average forward current vs. ambient temperature i C forward current ( a) 0.001 0.010 0.100 1.000 10.000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f C forward voltage ( v ) 16443 f t j =25 c t j =150 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 t amb C ambient temperature ( c ) 16444 i C average forward current ( a ) fav v r =v rrm half sinewave r thja 25k/w r thja 125k/w r thja 150k/w figure 3. reverse current vs. junction temperature figure 4. max. reverse power dissipation vs. junction temperature 1 10 100 25 50 75 100 125 150 t j C junction temperature ( c ) 16445 v r = v rrm i C reverse current ( a ) r 0 10 20 30 40 50 60 70 25 50 75 100 125 150 t j C junction temperature ( c ) 16446 v r = v rrm p C reverse power dissipation ( mw ) r p r Climit @100%v r p r Climit @80%v r
vishay BYG20 document number 86009 rev. 5, 07-jan-03 vishay semiconductors www.vishay.com 3 figure 5. diode capacitance vs. reverse voltage figure 6. max. reverse recovery time vs. forward current 0 5 10 15 20 25 30 0.1 1.0 10.0 100.0 v r C reverse voltage ( v ) 16447 c C diode capacitance ( pf ) d f=1mhz 0 0.2 0.4 0.6 0.8 0 100 200 300 400 600 t C reverse recovery time ( ns ) rr i f C forward current ( a ) 1.0 94 9343 500 25 c 75 c 100 c t amb =125 c 50 c i r =0.5a, i r =0.125a figure 7. max. reverse recovery charge vs. forward current 0 50 100 150 200 q C reverse recovery charge ( nc ) rr 94 9344 0 0.2 0.4 0.6 0.8 i f C forward current ( a ) 1.0 t amb =75 c t amb =100 c t amb =125 c t amb =50 c i r =0.5a, i r =0.125a t amb =25 c figure 8. thermal response 1 10 100 1000 z C thermal resistance for pulse cond. (k/ w thp t p C pulse length ( s ) 94 9339 10 C5 10 C4 10 C3 10 C2 10 C1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse 125k/w dc
document number 86009 rev. 5, 07-jan-03 www.vishay.com 4 vishay BYG20 vishay semiconductors dimensions in mm 14275
|
